Write driver boost circuit for memory cells

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12254918
APP PUB NO 20240135983A1
SERIAL NO

18402172

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Circuits, systems, and methods are described herein for generating a boost voltage for a write operation of a memory cell. In one embodiment, a boost circuit includes a first inverter and a second inverter, each configured to invert a write signal. The boost circuit also includes a transistor and a capacitor. The transistor is coupled to an output of the first inverter. The transistor is configured to charge a capacitor based on the write signal and provide a supply voltage to a write driver. The capacitor is coupled to an output of the second inverter. The capacitor is configured to generate and provide a delta voltage to the write driver.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jain, Sanjeev Kumar Ottawa, CA 64 167

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