High voltage guard ring semiconductor device and method of forming same

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12254257
APP PUB NO 20230043245A1
SERIAL NO

17581810

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Abstract

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A method of manufacturing a semiconductor device includes forming M_1st segments in a first metallization layer including: forming first and second M_1st segments for which corresponding long axes extend in a first direction and are substantially collinear, the first and second M_1st segments being free from another instance of M_1st segment being between the first and second M_1st segments; and (A) where the first and second M_1st segments are designated for corresponding voltage values having a difference equal to or less than a reference value, separating the first and second M_1st segments by a first gap; or (B) where the first and second M_1st segments are designated for corresponding voltage values having a difference greater than the reference value, separating the first and second M_1st segments by a second gap, a second size of the second gap being greater than a first size of the first gap.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chou, Wen-Shen Hsinchu, TW 73 297
Chuang, Yung-Hsu Hsinchu, TW 20 35
Kang, Po-Zeng Hsinchu, TW 27 98
Peng, Yung-Chow Hsinchu, TW 205 737
Syu, Ming-Cheng Hsinchu, TW 4 0
Tai, Shu-Chin Hsinchu, TW 2 12

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