Extreme ultraviolet mask and method for forming the same

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United States of America

PATENT NO 12253796
APP PUB NO 20240192582A1
SERIAL NO

18545948

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Abstract

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A photolithography mask includes a substrate, a reflective multilayer structure over the substrate, an adhesion layer over the reflective multilayer structure, a capping layer over the adhesion layer, and a patterned absorber layer over the capping layer. The capping layer includes a non-crystalline conductive material.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lin, Yun-Yue Hsinchu, TW 77 363

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