Silicon carbide single crystal wafer, and methods for manufacturing silicon carbide single crystal ingot and the silicon carbide single crystal wafer

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United States of America

PATENT NO 12252808
APP PUB NO 20210108334A1
SERIAL NO

17027840

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Abstract

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In a silicon carbide single crystal wafer, a dislocation density contained therein is 3500 dislocations/cm2 or less, and a difference of the dislocation density among a wafer central part, a wafer peripheral part and a wafer intermediate part is less than 50% of an average value thereof.

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Patent Owner(s)

Patent OwnerAddress
DENSO CORPORATION1-1 SHOWA-CHO KARIYA-CITY AICHI-PREF 448-8661

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hoshino, Norihiro Tokyo, JP 10 18
Kamata, Isaho Tokyo, JP 36 242
Okamoto, Takeshi Kariya, JP 120 1535
Tokuda, Yuichiro Kariya, JP 7 5
Tsuchida, Hidekazu Tokyo, JP 56 391

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