Power device and manufacturing method thereof

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12250834
APP PUB NO 20230046174A1
SERIAL NO

17737231

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Importance

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Abstract

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A power device includes: a semiconductor layer, a well region, a body region, a gate, a source, a drain, a first salicide block (SAB) layer and a second SAB layer. The first SAB layer is formed on a top surface of the semiconductor layer, and is located between the gate and the drain, wherein a part of the well is located vertically below and in contact with the first SAB layer. The second SAB layer is formed vertically above and in contact with the first SAB layer.

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Patent Owner(s)

  • RICHTEK TECHNOLOGY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Chu-Feng Hsibchu, TW 20 38
Huang, Chien-Hao Penghu, TW 86 202
Lo, Kuo-Hsuan Taoyuan, TW 11 29
Weng, Wu-Te Hsibchu, TW 26 39

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