Integrated assemblies and methods of forming integrated assemblies

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12250812
APP PUB NO 20230164991A1
SERIAL NO

18094906

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ATTORNEY / AGENT: (SPONSORED)

Importance

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Abstract

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Some embodiments include an integrated assembly having a source structure, and having a stack of alternating conductive levels and insulative levels over the source structure. Cell-material-pillars pass through the stack. The cell-material-pillars are arranged within a configuration which includes a first memory-block-region and a second memory-block-region. The cell-material-pillars include channel material which is electrically coupled with the source structure. Memory cells are along the conductive levels and include regions of the cell-material-pillars. A panel is between the first and second memory-block-regions. The panel has a first material configured as a container shape. The container shape defines opposing sides and a bottom of a cavity. The panel has a second material within the cavity. The second material is compositionally different from the first material. Some embodiments include methods of forming integrated assemblies.

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Patent Owner(s)

  • MICRON TECHNOLOGY INC.

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chary, Indra V Boise, US 89 271
Chen, Jiewei Boise, US 25 12
Fang, Jun Boise, US 162 1026
Greenlee, Jordan D Boise, US 158 144
Hopkins, John D Meridian, US 263 862
Klein, Rita J Boise, US 86 953
Li, Xiao Boise, US 322 4192
Lomeli, Nancy M Boise, US 77 395
Luo, Kaiming Singapore, SG 9 0
Samara, Vladimir Boise, US 5 9
Shamanna, Vinayak Boise, US 14 98

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