Semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12249649
APP PUB NO 20210210628A1
SERIAL NO

17207751

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Abstract

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A semiconductor device includes a fin-shaped structure on the substrate, a shallow trench isolation (STI) around the fin-shaped structure, a single diffusion break (SDB) structure in the fin-shaped structure for dividing the fin-shaped structure into a first portion and a second portion; a first gate structure on the fin-shaped structure, a second gate structure on the STI, and a third gate structure on the SDB structure. Preferably, a width of the third gate structure is greater than a width of the second gate structure and each of the first gate structure, the second gate structure, and the third gate structure includes a U-shaped high-k dielectric layer, a U-shaped work function metal layer, and a low-resistance metal layer.

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Patent Owner(s)

  • UNITED MICROELECTRONICS CORP.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Hsin-Yu Nantou County, TW 193 1239
Chen, Yi-Ren Kaohsiung, TW 35 166
Chuang, Yuan-Ting Yilan County, TW 6 12
Hsieh, Shou-Wei Hsinchu, TW 39 134
Lin, Chun-Hao Kaohsiung, TW 58 164
Su, Chih-Ming Tainan, TW 22 72
Wu, Cheng-Han Hsinchu, TW 111 309

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