Vertical-conduction silicon carbide MOSFET device having improved gate biasing structure and manufacturing process thereof

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United States of America

PATENT NO 12249634
APP PUB NO 20220262913A1
SERIAL NO

17669239

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Abstract

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A vertical-conduction MOSFET device formed in a body of silicon carbide having a first and a second face and a peripheral zone. A drain region, of a first conductivity type, extends in the body between the two faces. A body region, of a second conductivity type, extends in the body from the first face, and a source region, having the first conductivity type, extends to the inside of the body region from the first face of the body. An insulated gate region extends on the first face of the body and comprises a gate conductive region. An annular connection region, of conductive material, is formed within a surface edge structure extending on the first face of the body, in the peripheral zone. The gate conductive region and the annular connection region are formed by a silicon layer and by a metal silicide layer overlying the silicon layer.

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Patent Owner(s)

Patent OwnerAddress
STMICROELECTRONICS S R LVIA C OLIVETTI 2 AGRATE BRIANZA 20864

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Camalleri, Cateno Marco Catania, IT 23 61
Guarnera, Alfio Trecastagni, IT 30 44
Saggio, Mario Giuseppe Aci Bonaccorsi, IT 82 188

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