Method of forming p-type nitride semiconductor layer

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United States of America

PATENT NO 12249628
APP PUB NO 20230326976A1
SERIAL NO

18329191

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Abstract

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A semiconductor device includes a p-type nitride semiconductor layer, the p-type nitride semiconductor layer including an Al-containing nitride semiconductor layer and an Al-containing compound layer containing Al and C as main constituent elements and provided on the surface of the Al-containing nitride semiconductor layer.

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Patent Owner(s)

  • KYOTO UNIVERSITY; NICHIA CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Funato, Mitsuru Kyoto, JP 9 162
Kawakami, Yoichi Kyoto, JP 22 496
Kishimoto, Katsuhiro Kyoto, JP 2 0
Omae, Kunimichi Anan, JP 6 45

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