Semiconductor device having doped work function metal layer

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12249604
APP PUB NO 20230369331A1
SERIAL NO

18360416

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Abstract

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A semiconductor device includes a substrate, a gate stack, and epitaxy structures. The substrate has a P-type region. The gate stack is over the P-type region of the substrate and includes a gate dielectric layer, a bottom work function (WF) metal layer, a top WF metal layer, and a filling metal. The bottom WF metal layer is over the gate dielectric layer. The top WF metal layer is over and in contact with the bottom WF metal layer. Dipoles are formed between the top WF metal layer and the bottom WF metal layer, and the dipoles direct from the bottom WF metal layer to the top WF metal layer. The filling metal is over the top WF metal layer. The epitaxy structures are over the P-type region of the substrate and on opposite sides of the gate stack.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78
NATIONAL TAIWAN UNIVERSITYTAIPEI

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hsiao, Yi-Hsiu Hsinchu, TW 4 4
Huang, Chih-Hsiung Kaohsiung, TW 28 142
Kuok, Kun-Wa Hsinchu, TW 6 18
Liu, Chee-Wee Taipei, TW 142 1392
Tsai, Chung-En Hsinchu County, TW 21 35

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