Multigate device structure with engineered cladding and method making the same
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United States of America
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Mar 11, 2025
Grant Date -
Jun 8, 2023
app pub date -
Jun 7, 2022
filing date -
Jun 7, 2022
priority date (Note) -
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Abstract
The present disclosure provides a method of making a semiconductor device. The method includes forming a semiconductor stack on a substrate, wherein the semiconductor stack includes first semiconductor layers of a first semiconductor material and second semiconductor layers of a second semiconductor material alternatively stacked on the substrate; patterning the semiconductor stack and the substrate to form a trench and an active region being adjacent the trench; epitaxially growing a liner of the first semiconductor material on sidewalls of the trench and sidewalls of the active region; forming an isolation feature in the trench; performing a rapid thermal nitridation process, thereby converting the liner into a silicon nitride layer; and forming a cladding layer of the second semiconductor material over the silicon nitride layer.
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