Treatments to improve device performance
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United States of America
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Mar 11, 2025
Grant Date -
Jun 24, 2021
app pub date -
Mar 4, 2021
filing date -
Mar 4, 2021
priority date (Note) -
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Abstract
A method of forming a semiconductor structure includes annealing a surface of a substrate in an ambient of hydrogen to smooth the surface, pre-cleaning the surface of the substrate, depositing a high-κ dielectric layer on the pre-cleaned surface of the substrate, performing a re-oxidation process to thermally oxidize the surface of the substrate; performing a plasma nitridation process to insert nitrogen atoms in the deposited high-κ dielectric layer, and performing a post-nitridation anneal process to passivate chemical bonds in the plasma nitridated high-κ dielectric layer.
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