Selective patterning with wet-dry bilayer resist

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12249508
APP PUB NO 20220350246A1
SERIAL NO

17735726

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Abstract

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A method of patterning a substrate includes forming a multilayer photoresist stack on a substrate. The multilayer photoresist stack includes a first layer of a wet photoresist deposited by spin-on deposition, and a second layer of a dry photoresist deposited by vapor deposition. The first layer is positioned over the second layer. A first relief pattern is formed in the first layer by exposure to a first pattern of actinic radiation of a first wavelength and development of developable portions of the first layer using a first development process. The first relief pattern uncovers portions of the second layer. A multi-color layer of the first relief pattern is formed. The multi-color layer includes the wet photoresist and a third material that is different from the wet photoresist and the dry photoresist. A selective patterning process is executed for uncovered portions of one or two of the wet photoresist, the dry photoresist and the third material.

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Patent Owner(s)

  • TOKYO ELECTRON LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Devilliers, Anton J Clifton Park, US 150 1130

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