Method of manufacturing a semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12249507
APP PUB NO 20220392763A1
SERIAL NO

17885114

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Abstract

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A method of manufacturing a semiconductor device includes forming a first protective layer over an edge portion of a first main surface of a semiconductor substrate. A metal-containing photoresist layer is formed over the first main surface of the semiconductor substrate. The first protective layer is removed, and the metal-containing photoresist layer is selectively exposed to actinic radiation. A second protective layer is formed over the edge portion of the first main surface of the semiconductor substrate. The selectively exposed photoresist layer is developed to form a patterned photoresist layer, and the second protective layer is removed.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Ching-Yu Yuansun Village, TW 578 7902
Lin, Chin-Hsiang Hsinchu, TW 424 6439
Zi, An-Ren Hsinchu, TW 91 210

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