Manufacturing and reuse of semiconductor substrates

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12249504
APP PUB NO 20230127556A1
SERIAL NO

17743006

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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pa The method of processing a semiconductor wafer includes forming one or more epitaxial layers over its first main surface. It also involves forming one or more porous layers within the semiconductor wafer or within the epitaxial layers. Together, the semiconductor wafer, the epitaxial layer(s), and the porous layer(s) form a substrate. Next, doped regions of a semiconductor device are formed within the epitaxial layer(s). After forming these doped regions, a non-porous part of the semiconductor wafer is separated from the rest of the substrate along the porous layer(s).

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Patent Owner(s)

  • INFINEON TECHNOLOGIES AG

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Binter, Alexander Christian Villach, AT 1 0
Goller, Bernhard Villach, AT 60 218
Hoechbauer, Tobias Villach, AT 5 324
Huber, Martin Villach, AT 153 3200
Moder, Iris Villach, AT 30 38
Piccin, Matteo Villach, AT 13 18
Santos, Rodriguez Francisco Javier St Jakob im Rosental, AT 124 603
Schulze, Hans-Joachim Taufkirchen, DE 693 4306

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