Write assist circuit for memory device

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12249367
APP PUB NO 20230335186A1
SERIAL NO

17720154

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Importance

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Abstract

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A device is provided. The device includes a memory cell and a first write assist circuit. The memory cell operates with a first supply voltage and a second supply voltage different from the first supply voltage. The first write assist circuit includes a first write assist switch and a second write assist switch that are coupled to the memory cell through a first data line. In a write operation of a data, having a first logic value, to the memory cell, the first write assist switch transmits the first supply voltage to the first data line in response to a first control signal, received at a control terminal of the first write assist switch and having a voltage level of the second supply voltage, when the second write assist switch is configured to be turned off.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.; NATIONAL TAIWAN UNIVERSITY

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chung, Chia-Che Hsinchu, TW 19 19
Lin, Hsin-Cheng Taipei, TW 39 69
Liu, Chee-Wee Taipei, TW 142 1392

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