Photodetector device having avalanche photodiodes two-dimensionally arranged on a semiconductor layer and quenching element connected in series to the photodiodes

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United States of America

PATENT NO 12247870
APP PUB NO 20230358607A1
SERIAL NO

18223277

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Abstract

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A photodetector device includes an avalanche photodiode array substrate formed from compound semiconductor. A plurality of avalanche photodiodes arranged to operate in a Geiger mode are two-dimensionally arranged on the avalanche photodiode array substrate. A circuit substrate includes a plurality of output units which are connected to each other in parallel to form at least one channel. Each of the output units includes a passive quenching element and a capacitative element. The passive quenching element is connected in series to at least one of the plurality of avalanche photodiodes. The capacitative element is connected in series to at least one of the avalanche photodiodes and is connected in parallel to the passive quenching element.

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Patent Owner(s)

Patent OwnerAddress
HAMAMATSU PHOTONICS K KSHIZUOKA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Baba, Takashi Hamamatsu, JP 124 1150
Fujita, Takuya Hamamatsu, JP 62 306
Makino, Kenji Hamamatsu, JP 99 1096
Tamura, Yusei Hamamatsu, JP 3 2
Yamamoto, Koei Hamamatsu, JP 33 281

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