Semiconductor memory device and fabrication method thereof

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12245519
APP PUB NO 20240122078A1
SERIAL NO

18542791

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Abstract

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A semiconductor memory device includes a substrate having a conductor region thereon, an interlayer dielectric layer on the substrate, and a conductive via electrically connected to the conductor region. The conductive via has a lower portion embedded in the interlayer dielectric layer and an upper portion protruding from a top surface of the interlayer dielectric layer. The upper portion has a rounded top surface. A storage structure conformally covers the rounded top surface.

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Patent Owner(s)

  • UNITED MICROELECTRONICS CORP.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Yung-Shen Kaohsiung, TW 12 68
Hsu, Chia-Chang Kaohsiung, TW 75 424
Lin, Cheng-Yi Yilan County, TW 62 179
Lin, Chia-Hung Tainan, TW 148 347
Weng, Tang-Chun Chiayi, TW 8 15

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