Memory device and manufacturing method thereof

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12245432
APP PUB NO 20230389320A1
SERIAL NO

18446582

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Abstract

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The present disclosure provides a semiconductor structure and a method for forming a semiconductor structure. The semiconductor structure includes a substrate, and a dielectric stack over the substrate. The dielectric stack includes a first layer over the substrate and a second layer over the first layer. The semiconductor structure further includes a gate layer including a first portion traversing the second layer and a second portion extending between the first layer and the second layer.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Chieh-Fang Hsinchu County, TW 34 582
Chiang, Katherine H New Taipei, TW 143 70
Chu, Feng-Ching Pingtung County, TW 53 73
Lin, Chung-Te Tainan, TW 395 1052
Yang, Feng-Cheng Zhudong Township, TW 256 877

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