Semiconductor structure integrating logic element and memory element

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United States of America

PATENT NO 12245418
SERIAL NO

18931868

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Abstract

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A semiconductor structure integrating a logic element and a memory element includes a substrate, a logic element and a memory element. The substrate has a first region and a second region laterally adjacent to the first region. The logic element is disposed in the first region of the substrate, and the memory element is disposed in the second region of the substrate. The logic element includes multiple transistors. The memory element includes an upper electrode, a lower electrode, and a dielectric layer disposed between the upper electrode and the lower electrode. The lower electrode includes a first metal layer, and a first copper-phosphorus alloy layer extending along a contour of the first metal layer to surround the first metal layer. The upper electrode includes a second metal layer, and a second copper-phosphorus alloy layer extending along a contour of the second metal layer to surround the second metal layer.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lin, Chun-Ming Hsinchu County, TW 37 156

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