Semiconductor device and method for manufacturing the same

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12243938
APP PUB NO 20240038886A1
SERIAL NO

17623593

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Abstract

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A semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a first gate electrode, a first S/D electrode, and a first field plate. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer. The first and second nitride-based semiconductor layers collectively have an active portion and an electrically isolating portion that is non-semi-conducting and surrounds the active portion to form at least two interfaces extending along a first direction and spaced apart from each other by the active portion. The first gate electrode and the first S/D electrode are disposed above the second nitride-based semiconductor layer. The first field plate is disposed above the second nitride-based semiconductor layer and extends along the second direction and across the two interfaces such that the field plate extends to the electrically isolating portion, and overlaps with the first gate electrode near the interfaces.

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Patent Owner(s)

  • INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Shi, Yu Suzhou, CN 164 1313
Zhao, Qiyue Suzhou, CN 34 35

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