Method of manufacturing integrated circuit
Number of patents in Portfolio can not be more than 2000
United States of America
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Mar 4, 2025
Grant Date -
Nov 30, 2023
app pub date -
Aug 10, 2023
filing date -
Aug 10, 2023
priority date (Note) -
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Abstract
A method includes forming a first transistor stack over a substrate. The first transistor stack includes: a first transistor of a first conductivity type, and a second transistor of a second conductivity type different from the first conductivity type. The second transistor is above the first transistor. A plurality of first conductive lines is formed in a first metal layer above the first transistor stack. The plurality of first conductive lines includes, over the first transistor stack, a power conductive line configured to route power to the first transistor stack, one or more signal conductive lines configured to route one or more signals to the first transistor stack, and a shielding conductive line configured to shield the routed one or more signals. The one or more signal conductive lines are between the power conductive line and the shielding conductive line.
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