Method for forming semiconductor structure

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United States of America

PATENT NO 12243744
APP PUB NO 20230326756A1
SERIAL NO

18333100

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Abstract

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A method for forming a semiconductor structure includes forming first mandrels over a target layer. The method for forming a semiconductor structure also includes forming a first opening to cut off one of the first mandrels. The method for forming a semiconductor structure also includes forming a spacer layer over the first mandrels. The method for forming a semiconductor structure also includes forming second mandrels over the spacer layer and between the first mandrels. The method for forming a semiconductor structure also includes forming a second opening to cut off one of the second mandrels. The method for forming a semiconductor structure also includes etching the spacer layer. The method for forming a semiconductor structure also includes etching the target layer.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Yu-Chen Hsinchu, TW 61 224
Hsiao, Chih-Min Taoyuan, TW 28 11
Lai, Chien-Wen Hsinchu, TW 52 91

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