Method for processing a substrate

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12243742
APP PUB NO 20210327714A1
SERIAL NO

17233382

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Importance

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Abstract

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Provided is a method to adjust a film stress. In one embodiment, a first film is formed on the substrate by supplying a first reactant and a second reactant sequentially and alternately in a first step, and the first film is converted into a second film by supplying a third reactant to the first film in a second step. The film stress of the second film is adjusted by controlling the ratio of the first step and the second step.

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Patent Owner(s)

  • ASM IP HOLDING B.V.

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Choi, Seungwoo Hwaseong-si, KR 18 860
Gu, Yeahyun Hwaseong-si, KR 7 233
Kim, Hyunchul Hwaseong-si, KR 358 5057
Lee, Seunghyun Seoul, KR 196 487

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