Method of manufacturing semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12243618
APP PUB NO 20230189512A1
SERIAL NO

18164274

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Importance

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Abstract

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A method includes: coupling a first gate to a first word line through a first gate via, wherein the first gate extends along a first direction; coupling the first gate to a second word line through a second gate via, wherein each of the first gate, a second gate, the first gate via and the second gate via is disposed on a first active area which extends along the second direction, wherein the second gate extends along the first direction and is separated from the first gate along a second direction; coupling the first active area to a first bit line through a first conductive via; and aligning the first gate via, the second gate via and the a first conductive via with each other along the second direction.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-77 R O C

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Meng-Sheng Hsinchu County, TW 213 200
Wang, Yih Hsinchu, TW 285 868
Wu, Fu-An Hsinchu, TW 43 282
Yang, Yao-Jen Hsinchu County, TW 66 70

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