Single ended sense amplifier with current pulse circuit
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United States of America
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Mar 4, 2025
Grant Date -
Apr 18, 2024
app pub date -
Oct 17, 2022
filing date -
Oct 17, 2022
priority date (Note) -
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Abstract
Embodiments of the disclosure provide memory circuit, a sense amplifier and associated method for reading a resistive state in a memory device. The sense amplifier includes a bit cell configurable to a high or low resistance state; a sensing circuit that detects a voltage drop across the bit cell in response to an applied read current during a read operation and generates a high or low logic output at an output node; and a pulse generation circuit that increases the applied read current with an injected current pulse when a low to high transition of the resistive state of the bit cell is detected.
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