Semiconductor storage device and program operation method for a select gate line of the semiconductor storage device
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United States of America
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Mar 4, 2025
Grant Date -
Jan 25, 2024
app pub date -
Feb 28, 2023
filing date -
Feb 28, 2023
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Abstract
A semiconductor storage device includes a bit line, a select gate line, a sense amplifier circuit, a first transistor between the bit line and the sense amplifier circuit, and a second transistor between the bit line and a voltage generation circuit. In a first period of a program operation, the first transistor is turned OFF and the second transistor is turned ON, and a voltage of the first bit line is at a first voltage and a voltage of the select gate line is at a second voltage. In a second period of the program operation, the first transistor is turned ON and the second transistor is turned OFF, and a voltage of the first bit line is at a third voltage less than the first voltage and a voltage of the select gate line is at a fourth voltage greater than the second voltage.
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