Photomask assembly and method of forming the same

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12242181
APP PUB NO 20230384664A1
SERIAL NO

18362046

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ATTORNEY / AGENT: (SPONSORED)

Importance

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Abstract

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A portion of a buffer layer on a backside of a substrate of a photomask assembly may be removed prior to formation of one or more capping layers on the backside of the substrate. The one or more capping layers may be formed directly on the backside of the substrate where the buffer layer is removed from the substrate, and a hard mask layer may be formed directly on the one or more capping layers. The one or more capping layers may include a low-stress material to promote adhesion between the one or more capping layers and the substrate, and to reduce and/or minimize peeling and delamination of the capping layer(s) from the substrate. This may reduce the likelihood of damage to the pellicle layer and/or other components of the photomask assembly and/or may increase the yield of an exposure process in which the photomask assembly is used.

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First Claim

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

International Classification(s)

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  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Hsin-Yu Hsinchu, TW 193 1239
Hsu, Hsi-Cheng Taichung, TW 36 142
Jhang, You-Cheng Changhua, TW 16 44
Lee, Kuo-Hao Hsinchu, TW 18 20
Pan, Han-Zong Hsinchu, TW 20 48
Weng, Jui-Chun Taipei, TW 38 148

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