Diamond substrate and method for manufacturing the same

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12241175
APP PUB NO 20240344236A1
SERIAL NO

18632829

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Abstract

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Disclosed is a manufacturing method of a diamond substrate, comprising a seed crystal preparing step of preparing seed crystal for a single crystal of high temperature/high pressure grown diamond or for a single crystal of vapor deposition grown diamond, a first growing step of growing the seed crystal through microwave plasma chemical vapor deposition method to obtain a first crystal, a second growing step of growing the first crystal through microwave plasma chemical vapor deposition method to obtain a second crystal, and a third growth step of growing the second crystal through a microwave plasma chemical vapor deposition method to obtain a diamond substrate.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Yan, Chih Shiue Arcadia, US 7 2

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