Memory cell, semiconductor device having the same, and methods of manufacturing the same

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12239031
APP PUB NO 20220344583A1
SERIAL NO

17380051

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Abstract

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A memory cell includes a dielectric structure, a storage element structure, and a top electrode. The storage element structure is disposed in the dielectric structure, and the storage element structure includes a first portion and a second portion. The first portion includes a first side and a second side opposite to the first side, where a width of the first side is less than a width of the second side. The second portion is connected to the second side of the first portion, where a width of the second portion is greater than the width of the first side. The top electrode is disposed on the storage element structure, where the second portion is disposed between the first portion and the top electrode.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDHSINCHU

International Classification(s)

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  • 2021 Application Filing Year
  • H01L Class
  • 28775 Applications Filed
  • 15216 Patents Issued To-Date
  • 52.88 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances202120222023202420250255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Yu-Sheng Taoyuan, TW 116 431
Chiou, Da-Ching Hsinchu, TW 9 12
Lin, Yu-Chao Hsinchu, TW 69 123

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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges12643501 - 1001000200030004000500060007000800090001000011000120001300014000

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