Memory cell, semiconductor device having the same, and methods of manufacturing the same
Number of patents in Portfolio can not be more than 2000
United States of America
Stats
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Feb 25, 2025
Grant Date -
Oct 27, 2022
app pub date -
Jul 20, 2021
filing date -
Jul 20, 2021
priority date (Note) -
In Force
status (Latency Note)
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Importance

US Family Size
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Non-US Coverage
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Abstract
A memory cell includes a dielectric structure, a storage element structure, and a top electrode. The storage element structure is disposed in the dielectric structure, and the storage element structure includes a first portion and a second portion. The first portion includes a first side and a second side opposite to the first side, where a width of the first side is less than a width of the second side. The second portion is connected to the second side of the first portion, where a width of the second portion is greater than the width of the first side. The top electrode is disposed on the storage element structure, where the second portion is disposed between the first portion and the top electrode.
First Claim
all claims..Other Claims data not available
Family
Country | kind | publication No. | Filing Date | Type | Sub-Type |
---|---|---|---|---|---|
CN | A | CN114927612 | Jan 07, 2022 | Patent | Application |
Type : Patent Sub-Type : Application | |||||
UNEXAMINED APPLICATION FOR A PATENT FOR INV. | Memory cell, method of manufacturing the same, and semiconductor device having the memory cell | Aug 19, 2022 | |||
TW | A | TW202242879 | Jan 13, 2022 | Patent | Application |
Type : Patent Sub-Type : Application | |||||
LAID OPEN APPLICATION FOR PATENT OR PATENT OF ADDITION | MEMORY CELL, SEMICONDUCTOR DEVICE HAVING THE SAME, AND METHODS OF MANUFACTURING THE SAME | Nov 01, 2022 | |||
US | A1 | US20240389480 | Jul 29, 2024 | Patent | Application |
Type : Patent Sub-Type : Application | |||||
FIRST PUBLISHED PATENT APPLICATION | MEMORY CELL, SEMICONDUCTOR DEVICE HAVING THE SAME, AND METHODS OF MANUFACTURING THE SAME | Nov 21, 2024 | |||
US | A1 | US20250204284 | Feb 20, 2025 | Patent | Application |
Type : Patent Sub-Type : Application | |||||
FIRST PUBLISHED PATENT APPLICATION | MEMORY CELL, SEMICONDUCTOR DEVICE HAVING THE SAME, AND METHODS OF MANUFACTURING THE SAME | Jun 19, 2025 |
- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD | HSINCHU |
International Classification(s)

- 2021 Application Filing Year
- H01L Class
- 28775 Applications Filed
- 15216 Patents Issued To-Date
- 52.88 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Chen, Yu-Sheng | Taoyuan, TW | 116 | 431 |
# of filed Patents : 116 Total Citations : 431 | |||
Chiou, Da-Ching | Hsinchu, TW | 9 | 12 |
# of filed Patents : 9 Total Citations : 12 | |||
Lin, Yu-Chao | Hsinchu, TW | 69 | 123 |
# of filed Patents : 69 Total Citations : 123 |
Cited Art Landscape
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Patent Citation Ranking
- 0 Citation Count
- H01L Class
- 0 % this patent is cited more than
- < 1 Age
Forward Cite Landscape
- No Forward Cites to Display

Maintenance Fees
Fee | Large entity fee | small entity fee | micro entity fee | due date |
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3.5 Year Payment | $1600.00 | $800.00 | $400.00 | Aug 25, 2028 |
7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Aug 25, 2032 |
11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Aug 25, 2036 |
Fee | Large entity fee | small entity fee | micro entity fee |
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Surcharge - 3.5 year - Late payment within 6 months | $160.00 | $80.00 | $40.00 |
Surcharge - 7.5 year - Late payment within 6 months | $160.00 | $80.00 | $40.00 |
Surcharge - 11.5 year - Late payment within 6 months | $160.00 | $80.00 | $40.00 |
Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
Full Text

Legal Events
Date | Code | Event | Description |
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May 23, 2016 | STCH | INFORMATION ON STATUS: PATENT DISCONTINUATION | free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362 |
Apr 27, 2016 | FP | LAPSED DUE TO FAILURE TO PAY MAINTENANCE FEE | Effective Date: Apr 27, 2016 |
Apr 27, 2016 | LAPS | LAPSE FOR FAILURE TO PAY MAINTENANCE FEES | |
Dec 04, 2015 | REMI | MAINTENANCE FEE REMINDER MAILED | |
Oct 27, 2011 | FPAY | FEE PAYMENT | year of fee payment: 8 |
Apr 28, 2008 | FPAY | FEE PAYMENT | year of fee payment: 4 |
Apr 28, 2008 | SULP | SURCHARGE FOR LATE PAYMENT | |
Dec 05, 2007 | FEPP | FEE PAYMENT PROCEDURE | free format text: PAT HOLDER NO LONGER CLAIMS SMALL ENTITY STATUS, ENTITY STATUS SET TO UNDISCOUNTED (ORIGINAL EVENT CODE: STOL); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
Nov 05, 2007 | REMI | MAINTENANCE FEE REMINDER MAILED | |
Feb 22, 2005 | CC | CERTIFICATE OF CORRECTION | |
Apr 27, 2004 | I | Issuance | |
Oct 29, 2002 | F | Filing | |
Oct 29, 2002 | PD | Priority Date | |
Oct 09, 2002 | AS | ASSIGNMENT | free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:DASGUPTA, UDAY;REEL/FRAME:013442/0121 Owner name: INSTITUTE OF MICROELECTRONICS, SINGAPORE Effective Date: Oct 09, 2002 |

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