Magnetic tunnel junction structures and related methods
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United States of America
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Feb 25, 2025
Grant Date -
Nov 10, 2022
app pub date -
Jul 21, 2022
filing date -
Jul 21, 2022
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Abstract
The disclosure is directed to spin-orbit torque (“SOT”) magnetoresistive random-access memory (“MRAM”) (“SOT-MRAM”) structures and methods. A new structure of the SOT channel has one or more magnetic insertion layers superposed or stacked with one or more heavy metal layer(s). Through proximity to a magnetic insertion layer, a surface portion of a heavy metal layer is magnetized to include a magnetization. The magnetization within the heavy metal layer enhances spin-dependent scattering, which leads to increased transverse spin imbalance.
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