Three-dimensional memory device and method
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United States of America
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Feb 25, 2025
Grant Date -
May 11, 2023
app pub date -
Jan 3, 2023
filing date -
Jan 3, 2023
priority date (Note) -
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Abstract
In an embodiment, a device includes: a first dielectric layer having a first sidewall; a second dielectric layer having a second sidewall; a word line between the first dielectric layer and the second dielectric layer, the word line having an outer sidewall and an inner sidewall, the inner sidewall recessed from the outer sidewall, the first sidewall, and the second sidewall; a memory layer extending along the outer sidewall of the word line, the inner sidewall of the word line, the first sidewall of the first dielectric layer, and the second sidewall of the second dielectric layer; and a semiconductor layer extending along the memory layer.
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