Semiconductor structure and semiconductor structure manufacturing method

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12238919
APP PUB NO 20220085027A1
SERIAL NO

17456091

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Abstract

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A semiconductor structure and a semiconductor structure manufacturing method is provided. The semiconductor structure includes: a wordline; and a first bitline and a second bitline located on two sides of the wordline and a first storage structure and a second storage structure located on the two sides of the wordline, the first bitline and the second bitline being connected to the first storage structure and the second storage structure respectively through a transistor. An extension direction of the first bitline and an extension direction of the wordline are at an acute or obtuse angle. In this way, the first storage structure and the second storage structure are provided on both sides of the wordline, which can increase storage capacity.

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Patent Owner(s)

  • CHANGXIN MEMORY TECHNOLOGIES, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Liao, Chuxian Hefei, CN 5 4
Ying, Zhan Hefei, CN 72 63
Zhu, Yuhan Hefei, CN 13 23

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