Semiconductor-manufacturing apparatus member and method of manufacturing the same
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United States of America
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Feb 25, 2025
Grant Date -
Jun 16, 2022
app pub date -
Sep 3, 2021
filing date -
Sep 3, 2021
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Abstract
A semiconductor-manufacturing apparatus member includes an upper plate that has a wafer placement surface having a concave shape or a convex shape, that contains an electrostatic electrode, and that is composed of ceramics; an intermediate plate that is joined to a surface of the upper plate opposite the wafer placement surface with a first metal joining layer interposed therebetween; and a lower plate that is joined to a surface of the intermediate plate opposite the surface that is joined to the upper plate with a second metal joining layer interposed therebetween, wherein a thermal expansion coefficient of the intermediate plate is larger than thermal expansion coefficients of the upper plate and the lower plate.
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