Method for fabricating semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12237415
APP PUB NO 20230395719A1
SERIAL NO

18234889

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Abstract

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A method for fabricating a semiconductor device includes the steps of forming a gate structure on a substrate, forming an epitaxial layer adjacent to the gate structure, and then forming a first cap layer on the epitaxial layer. Preferably, a top surface of the first cap layer includes a curve concave upward and a bottom surface of the first cap layer includes a planar surface higher than a top surface of the substrate.

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Patent Owner(s)

  • UNITED MICROELECTRONICS CORP.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Bo-Shiun Taichung, TW 4 7
Chen, Chun-Jen Tainan, TW 140 458
Huang, Chung-Ting Kaohsiung, TW 16 18
Lin, Yu-Shu Tainan, TW 53 239
Tang, Chi-Hsuan Kaohsiung, TW 13 16

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