Trench gate silicon carbide MOSFET device and fabrication method thereof

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United States of America

PATENT NO 12237410
SERIAL NO

18937369

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Abstract

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A trench gate silicon carbide metal oxide semiconductor field effect transistor (MOSFET) device and a fabrication method thereof. A second conductive heavily doped layer at the bottom corner of a trench gate is electrically connected to a second conductive heavily doped layer on another side edge of the trench gate through a layout design, which ensures a ground potential during voltage blocking state. This design protects the insulating layer in the trench gate and the Schottky contact in a junction barrier Schottky (JBS) diode, thereby enhancing device reliability. Moreover, in a diode operating mode, P+ on the left and right sides of the trench gate are connected to a positive potential. When the P+/N− junction is activated, the conductivity modulation can be implemented through hole injection, thereby improving the device's ability to withstand surge current impacts.

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Patent Owner(s)

Patent OwnerAddress
JSAB TECHNOLOGIES (SHENZHEN) LTDSHENZHEN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Feng, Hao Shenzhen, CN 122 1213
Liu, Yong Shenzhen, CN 1235 24302
Peng, Xin Shenzhen, CN 19 99
Sin, Johnny Kin On Shenzhen, CN 23 111

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