Method of forming semiconductor device
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United States of America
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Feb 25, 2025
Grant Date -
Oct 12, 2023
app pub date -
Apr 6, 2022
filing date -
Apr 6, 2022
priority date (Note) -
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Abstract
A method of forming a semiconductor device includes: forming a semiconductor structure having source/drain regions, a fin disposed between the source/drain regions, and a dummy gate disposed on the fin and surrounded by a spacer; removing the dummy gate to form a gate trench which is defined by a trench-defining wall; forming a gate dielectric layer on the trench-defining wall; forming a work function structure on the gate dielectric layer; forming a resist layer to fill the gate trench; removing a top portion of the resist layer; removing the work function structure exposed from the resist layer using a wet chemical etchant; removing the resist layer; and forming a conductive gate in the gate trench.
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