Semiconductor device and method for fabricating the same

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United States of America

PATENT NO 12237398
SERIAL NO

17338691

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Abstract

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A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer adjacent to the gate structure, wherein the first spacer comprises silicon carbon nitride (SiCN); forming a second spacer adjacent to the first spacer, wherein the second spacer comprises silicon oxycarbonitride (SiOCN); and forming a source/drain region adjacent to two sides of the second spacer.

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Patent Owner(s)

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UNITED MICROELECTRONICS CORPNO 3 LI-HSIN ROAD 2 SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU CITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chuang, Fu-Jung Kaohsiung, TW 23 46
Chuang, Po-Jen Kaohsiung, TW 29 336
Hsiao, Ya-Yin Taipei, TW 5 4
Huang, Nan-Yuan Tainan, TW 17 104
Kuo, Chia-Ming Kaohsiung, TW 64 693
Wang, Yu-Ren Tainan, TW 134 658
Yen, Ying-Wei Miaoli County, TW 37 182

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