Semiconductor device and method for fabricating the same

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United States of America

PATENT NO 12237329
APP PUB NO 20240105720A1
SERIAL NO

18525909

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Abstract

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A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region and a second fin-shaped structure on the second region; forming a patterned mask on the second region; and performing a process to enlarge the first fin-shaped structure so that the top surfaces of the first fin-shaped structure and the second fin-shaped structure are different.

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Patent Owner(s)

Patent OwnerAddress
UNITED MICROELECTRONICS CORPNO 3 LI-HSIN ROAD 2 SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU CITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Hsin-Yu Nantou County, TW 193 1239
Hsieh, Shou-Wei Hsinchu, TW 39 134
Lin, Chun-Hao Kaohsiung, TW 58 164

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