Semiconductor device and method

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12237227
APP PUB NO 20230290688A1
SERIAL NO

17654408

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Importance

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Abstract

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A device includes a fin on a substrate; a first transistor, including: a drain region and a first source region in the fin; and a first gate structure on the fin between the first source region and the drain region; a second transistor, including: the drain region and a second source region in the fin; and a second gate structure on the fin between the second source region and the drain region; a first resistor, including: the first source region and a first resistor region in the fin; and a third gate structure on the fin between the first source region and the first resistor region; and a second resistor, including: the second source region and a second resistor region in the fin; and a fourth gate structure on the fin between the second source region and the second resistor region.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fu, Shih-Chun Hsinchu, TW 12 225
Huang, Shih-Fen Jhubei, TW 87 331
Shih, Chi-Yuan Hsinchu, TW 74 698
Wen, Kai-Qiang Taipei, TW 6 2
Yuan, Feng Hsinchu, TW 113 2989

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