Contact with bronze material to mitigate undercut
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United States of America
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Feb 25, 2025
Grant Date -
Jan 28, 2021
app pub date -
Sep 30, 2020
filing date -
Sep 30, 2020
priority date (Note) -
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status (Latency Note)
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Abstract
Described examples provide microelectronic devices and fabrication methods, including fabricating a contact structure by forming a titanium or titanium tungsten barrier layer on a conductive feature, forming a tin seed layer on the barrier layer, forming a copper structure on the seed layer above the conductive feature of the wafer or die, heating the seed layer and the copper structure to form a bronze material between the barrier layer and the copper structure, removing the seed layer using an etching process that selectively removes an exposed portion of the seed layer, and removing an exposed portion of the barrier layer.
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