Importance

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Abstract

A reflective mask blank for EUV lithography, includes: a substrate; a conductive film; a reflective layer; and an absorption layer, the absorption layer absorbing the EUV light, wherein the conductive film has a refractive index n_{λ1000-1100 nm} of 5.300 or less and has an extinction coefficient k_{λ1000-1100 nm} of 5.200 or less, at a wavelength of 1000 nm to 1100 nm, the conductive film has a refractive index n_{λ600-700 nm} of 4.300 or less and has an extinction coefficient k_{λ600-700 nm} of 4.500 or less, at a wavelength of 600 nm to 700 nm, the conductive film has a refractive index n_{λ400-500 nm} of 2.500 or more and has an extinction coefficient k_{λ400-500 nm} of 0.440 or more, at a wavelength of 400 nm to 500 nm, and the conductive film has a film thickness t of 40 nm to 350 nm.

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First Claim