EUV photomask and manufacturing method of the same

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United States of America

PATENT NO 12235573
APP PUB NO 20230384662A1
SERIAL NO

18361891

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Abstract

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A photomask and a method of manufacturing a photomask are provided. According to an embodiment, a method includes: providing a substrate; depositing a reflective layer including molybdenum layers and silicon layers over the substrate; depositing a capping layer over the reflective layer; depositing an absorption layer over the capping layer; and performing a treatment to form a border region including molybdenum silicide in the reflective layer.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

International Classification(s)

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  • 2023 Application Filing Year
  • G03F Class
  • 1481 Applications Filed
  • 296 Patents Issued To-Date
  • 19.99 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances2023202420250255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hsu, Ching-Hsiang Hsinchu, TW 185 2817
Hsu, Feng Yuan Yilan County, TW 12 13
Shen, Tran-Hui Yunlin County, TW 19 116

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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges7870050100150200250300350400450500550600650700750800850

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