RRAM process integration scheme and cell structure with reduced masking operations

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12232335
APP PUB NO 20220406845A1
SERIAL NO

17890837

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Abstract

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Disclosed is a resistive random access memory (RRAM). The RRAM includes a bottom electrode made of tungsten and a switching layer made of hafnium oxide disposed above the bottom electrode, wherein the switching layer includes a switchable filament. The RRAM further includes a resistive layer disposed above the switching layer and a bit line disposed above the resistive layer, wherein the resistive layer extends laterally to connect two or more memory cells along the bit line.

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Patent Owner(s)

  • HEFEI RELIANCE MEMORY LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Haukness, Brent Steven Monte Sereno, US 45 420
Lu, Zhichao San Jose, US 51 120

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