Memory devices with selector layer and methods of forming the same

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United States of America

PATENT NO 12232331
APP PUB NO 20240032309A1
SERIAL NO

18479836

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Abstract

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A memory device includes a first electrode, a selector layer and a plurality of first work function layers. The first work function layers are disposed between the first electrode and the selector layer, and a work function of the first work function layer increases as the first work function layer becomes closer to the selector layer.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bao, Xinyu Fremont, US 93 1234
Chen, Tzu-Chiang Hsinchu, TW 186 1189
Chen, Yu-Sheng Taoyuan, TW 116 431
Chiang, Hung-Li Taipei, TW 181 1424
Chiu, Jung-Piao Kaohsiung, TW 34 30

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