Method of forming semiconductor structure and semiconductor structure
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United States of America
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Feb 18, 2025
Grant Date -
Feb 9, 2023
app pub date -
Jan 11, 2022
filing date -
Jan 11, 2022
priority date (Note) -
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Abstract
The present disclosure provides a method of forming a semiconductor structure and a semiconductor structure. The method of forming a semiconductor structure includes: providing an initial structure, where the initial structure includes a substrate and bit line structures arranged at intervals on the substrate; forming an initial protective structure, where the initial protective structure at least covers a part of sidewalls of each of the bit line structures, and the initial protective structure has a first height in a direction parallel to the bit line structures; forming a shielding structure, where the shielding structure at least covers a part of sidewalls of the initial protective structure; and removing at least a part of the initial protective structure exposed by the shielding structure by using the shielding structure as an etching selection layer, to form protective structures each having a second height.
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