Semiconductor device and manufacturing method therefor

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12230693
APP PUB NO 20220367682A1
SERIAL NO

17765295

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Abstract

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A semiconductor device and a manufacturing method therefor. The semiconductor device comprises: a semiconductor substrate. A first drift region is formed in the semiconductor substrate. A gate structure is formed on the semiconductor substrate A part of the gate structure covers a part of the first drift region. A first trench is formed in the first drift region, and a drain region is formed in the semiconductor substrate at the bottom of the first trench.

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Patent Owner(s)

  • CSMC TECHNOLOGIES FAB2 CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
He, Nailong Wuxi, CN 11 4
Zhang, Sen Wuxi, CN 105 329

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