Planar SiC MOSFET with retrograde implanted channel
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United States of America
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Feb 18, 2025
Grant Date -
Oct 6, 2022
app pub date -
Jul 31, 2020
filing date -
Jul 31, 2020
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Abstract
A silicon carbide (SiC) planar transistor device includes a SiC semiconductor substrate of a first charge type, a SiC epitaxial layer of the first charge type formed at a top surface of the SiC semiconductor substrate, a source structure of the first charge type formed at a top surface of the SiC epitaxial layer, a drain structure of the first charge type formed at a bottom surface of the SiC semiconductor substrate, a gate structure comprising a gate runner and a gate dielectric that covers at least part of the source structure and the gate runner, and a channel region of a second charge type located in vertical direction below the gate structure and adjacent to the source structure. The channel can be formed by performing a plurality of implantation steps so that the channel region comprises a first region and a second region.
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