Method for manufacturing semiconductor mark, and semiconductor mark

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12230584
APP PUB NO 20220216163A1
SERIAL NO

17648878

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Abstract

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A method for manufacturing semiconductor mark includes: providing a pattern having a peripheral edge corrected by Optical Proximity Correction (OPC); cutting multiple independent alignment sections from the pattern; and splicing the multiple alignment sections to form a semiconductor mark having a peripheral edge corrected by OPC.

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Patent Owner(s)

  • CHANGXIN MEMORY TECHNOLOGIES, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Shan, Chuang Hefei, CN 6 0

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