Method for fabricating semiconductor device with damascene structure
Number of patents in Portfolio can not be more than 2000
United States of America
Stats
-
Feb 18, 2025
Grant Date -
Sep 28, 2023
app pub date -
Mar 23, 2022
filing date -
Mar 23, 2022
priority date (Note) -
In Force
status (Latency Note)
Importance
|
US Family Size
|
Non-US Coverage
|
Abstract
The present application discloses a method for fabricating a semiconductor device including: providing a photomask including an opaque layer on a mask substrate and surrounding a translucent layer on the mask substrate; forming a pre-process mask layer on a device stack; patterning the pre-process mask layer using the photomask to form a patterned mask layer including a mask region corresponding to the opaque layer, a trench region corresponding to the translucent layer, and a via hole corresponding to the mask opening of via feature; performing a damascene etching process to form a via opening and a trench opening in the device stack; and forming a via in the via opening and a trench in the trench opening. The translucent layer includes a mask opening of via feature which exposes a portion of the mask substrate. A thickness of the trench region is less than a thickness of the mask region.
First Claim
Other Claims data not available
Family
| Country | kind | publication No. | Filing Date | Type | Sub-Type |
|---|
International Classification(s)
- 2022 Application Filing Year
- H01L Class
- 27731 Applications Filed
- 8200 Patents Issued To-Date
- 29.57 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 0 Citation Count
- H01L Class
- 0 % this patent is cited more than
- < 1 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 3.5 Year Payment | $1600.00 | $800.00 | $400.00 | Aug 18, 2028 |
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Aug 18, 2032 |
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Aug 18, 2036 |